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The design of switching power electronic circuits is similar to that of transistors for traditional electronics. For example, bipolar power transistors such as silicon bipolar junction transistors (BJTs) and germanium bipolar junction transistors (GBTs) offer similar performance. The differences between BJTs and GTOs is that the GTOs have generally lower forward resistance, higher breakdown voltage, better radiation hardness, and lower switching noise.
The most important building block of all power electronics is the power switch. This is usually implemented as a silicon semiconductor device, either a metal-oxide semiconductor field-effect transistor (MOSFET) or an insulated gate bipolar transistor (IGBT). The power MOSFET is often used in low-to-mid power ranges, and the IGBT in high-power applications. However, it must be pointed out that there are some key differences between a low- or mid-voltage bipolar (NPN-transistor/PNP-transistor) variety. They are much better suited for switching as they offer the following advantages:
The switching power supply, power-line communications devices, and switch-mode power supplies are widely used in daily life. The power electronic devices are incorporated in a power module or converter, which is connected to the grid or to a battery. Typical power modules are those found in computers, mobile phones, and automobiles.
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